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| Variable Capacitance Diodes MA2S304 Silicon epitaxial planar type Unit : mm For VCO 0.15 min. 0.15 min. * Good linearity and large capacitance-ratio in CD VR relation * Small series resistance rD * SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27 - 0.02 0.8 0.1 + 0.05 I Features 1.3 0.1 1.7 0.1 Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 30 150 -55 to +150 Unit V C C 0.7 0.1 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: K I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance* CD(1V)/CD(4V) rD VR = 4 V, f = 100 MHz VR = 28 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 24.8 6.0 3.0 1.0 Conditions Min Typ Max 10 29.8 8.3 Unit nA pF pF Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.1 0.13 - 0.02 + 0.05 I Absolute Maximum Ratings Ta = 25C 0.27 - 0.02 + 0.05 1 MA2S304 CD VR 100 f = 1 MHz Ta = 25C 120 25C Variable Capacitance Diodes IF V F 1.04 CD Ta f = 1 MHz VR = 4 V 1V 50 100 1.03 - 40C Diode capacitance CD (pF) 30 20 Forward current IF (mA) 10 60 CD(Ta) CD(Ta = 25C) 0 0.2 0.4 0.6 0.8 1.0 1.2 80 Ta = 60C 1.02 1.01 5 3 2 40 1.00 20 0.99 1 0 0 4 8 12 16 20 24 28 32 36 40 0.98 0 20 40 60 80 100 Reverse voltage VR (V) Forward voltage VF (V) Ambient temperature Ta (C) IR T a 100 VR = 28 V Reverse current IR (nA) 10 1 0.1 0.01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 2 |
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